Transition from a Single- to Double-Quantum-Well Magnetotransport in the p-GeSi/Ge/p-GeSi Heterosystem

Abstract

As revealed from the high field low temperature magnetotransport measurements the joint quasi two dimensional hole gas with the density Ps (3-5) x 10(exp15)/m2 exists in a p-GeSi/Ge/p-GeSi quantum well up to the Ge layer widths dw < 25 nm, but it separates in two sublayers located at the well's sidewalls at Ps approx. = 5 x 10(exp15)/m2 and d(w) somewhat > 35 nm. The sublayers have approximately equal resistances indicating similarity of the normal and inverted interfaces in ths heterosystem. The recendy discovered quantized Hall insulator phase was detected here only in the intermediate range of sublayer separations yielding evidence that the intersublayer correlations are important to stabilize this state.

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Document Details

Document Type
Technical Report
Publication Date
Jun 23, 2000
Accession Number
ADP013125

Entities

People

  • G. A. Alshanskii
  • M. V. Yakunin
  • O. A. Kuznetsov
  • V. N. Neverov
  • Yu. G. Arapov

Organizations

  • Russian Academy of Sciences

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  • Advanced Electronics

DTIC Thesaurus Topics

  • Electron Gas
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  • Physics

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  • Analytical Mechanics
  • Fluid Dynamics.
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Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing