Room Temperature Single Electron Devices by STM/AFM Nano-Oxidation Process

Abstract

A single electron transistor (SET) and a single electron memory were fabricated using the improved pulse-mode AFM nano-oxidation process. A single electron transistor which works as an electrometer for detecting the potential of the memory node of the single electron memory showed the clear Coulomb oscillation characteristics with the periods of 2.1 V at room temperature. A single electron memory showed the hysteresis loop by the return trip of the memory bias when starting from O V to 10 V and again coming back to O V.

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Document Details

Document Type
Technical Report
Publication Date
Jun 23, 2000
Accession Number
ADP013126

Entities

People

  • Kazuhiko Matsumoto

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Capacitance
  • Electrometers
  • Electron Transfer
  • Electronic Mail
  • Electrons
  • Equivalent Circuits
  • Hard Copy
  • Hysteresis
  • Measurement
  • Oscillation
  • Oxidation
  • Space Charge
  • Substrates
  • Technical Information Centers
  • Thickness
  • Three Dimensional
  • Transistors

Fields of Study

  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Nanoscale Plasmonic Nanotechnology
  • Plasma Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Microelectronics - Microelectromechanical Systems