Resonant Tunneling Diodes Based on Stacked Self-Assembled Ge/Si Islands

Abstract

We present a new concept and first results of resonant tunneling diodes based on self assembled Ge/Si islands. The proposed structure consists of closely stacked and vertically aligned Ge islands which create vertical channels with energetically deep thermalization layers and high Si double barriers for holes in the valence band. The current voltage (I-V) curve of such a layer sequence shows two resonances which we attribute to the heavy-heavy hole and heavy-light hole (lh) transition. The lh resonance is pronounced and negative differential resistance is conserved up to over 45 K. Magnetic field dependence of the resonances suggest that the tunneling current through the structure is of 2-dimensional character.

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Document Details

Document Type
Technical Report
Publication Date
Jun 23, 2000
Accession Number
ADP013129

Entities

People

  • F. Ernst
  • O. G. Schmidt
  • O. Kienzle
  • R. J. Haug
  • U. Denker

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Structures
  • Charge Carriers
  • Diodes
  • Electrical Measurement
  • Electron Microscopy
  • Energy Bands
  • Fabrication
  • Magnetic Fields
  • Materials
  • Photolithography
  • Quantum Tunneling
  • Quantum Wells
  • Resonant Tunneling Diodes
  • Transmission Electron Microscopy
  • Tunnel Diodes
  • Two Dimensional
  • Valence Bands

Readers

  • Nanocomposite Materials Science
  • Plasma Physics / Magnetohydrodynamics
  • Semiconductor Device Technology