Multiple-Barrier Resonant Tunneling Structures for Application in a Microwave Generator Stabilized by Microstrip Resonator
Abstract
One of the main goals of contemporary electronics is the expansion of device capability to high frequencies up to the terahertz range. In this paper the results of comparison investigation of vertical transport and high frequency oscillatory properties of double-barrier and triple-barrier resonant tunneling structures (DBRTS and TBRTS) combined with a microstrip resonator stabilizing circuit are presented. The I-V characteristic of measured TBRTS shows higher values of a peak-to-valley current ratio than the values measured for DBRTS in agreement with theoretical predictions. Microwave oscillations from semiconductor quantum well resonant-tunneling structures. stabilized by use of the microstrip resonator, are observed for the first time. The microstrip system. compatible with MBE methods, provides appropriate circuit conditions for realization of high frequency oscillations by use of planar active structures and looks rather encouraging for millimeter and submillimeter wavelength applications.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 23, 2000
- Accession Number
- ADP013131
Entities
People
- A. L. Karuzskii
- A. V. Perestoronin
- D. S. Shipitan
- S. V. Evstigneev
- Yu. A. Mityagin
Organizations
- Russian Academy of Sciences