Does the Quasibound-State Lifetime Restrict the High-Frequency Operation of Resonant-Tunneling Diodes

Abstract

We have, shown that, firstly the response time (tau(resp)) of the resonant-tunneling diode (RTD) can be much smaller as well as much larger than the quasibound-state lifetime in the quantum well (tau(dwell)); secondly, the real part of the RTD conductance can be negative at the frequencies higher than the reciprocal tau(dwell). The Coulomb interaction of the electrons in the quantum well with emitter and collector is responsible for the effects. A simple analytical expression for the impedance of the RTD has been derived and it is in fairly good agreement with experimental data.

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Document Details

Document Type
Technical Report
Publication Date
Jun 23, 2000
Accession Number
ADP013132

Entities

People

  • M. Feiginov

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Accumulators
  • Dwell Time
  • Dynamic Response
  • Electrons
  • Emitters
  • Experimental Data
  • Fermi Levels
  • First Order Circuits
  • Frequency
  • Intermediate Frequencies
  • Phase Shift
  • Quantum Tunneling
  • Quantum Wells
  • Resonant Tunneling Diodes
  • Technical Information Centers
  • Thermionic Emission
  • Tunnel Diodes

Readers

  • Integrated Circuit Design and Technology.
  • Organizational Psychology.
  • Plasma Physics / Magnetohydrodynamics

Technology Areas

  • Microelectronics
  • Quantum Computing