Soft Breakdown in the Bistable MOS Tunnel Structures

Abstract

The S-shape reverse-bias characteristics of MOS tunnel structure on n-Si (d < 3 nm, Nd approximately equal 10(exp16) cm(exp-3) and their post-soft-breakdown transformation are analyzed. Turn-on voltages and holding voltages are found theoretically and measured. The change of these parameters with oxide damage is suggested to reflect a complicated interplay between the injection efficiency. energy distribution of injected electrons and conductivity of an inversion layer.

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Document Details

Document Type
Technical Report
Publication Date
Jun 23, 2000
Accession Number
ADP013133

Entities

People

  • A. F. Shulekin
  • I. V. Grekhov
  • M. I. Vexler
  • S. E. Tyaginov

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Dielectrics
  • Electrical Conductivity
  • Electron Energy
  • Electrons
  • Energy
  • Hard Copy
  • Inversion
  • Ionization
  • Multiplication Factor
  • Nanostructures
  • Quantum Yields
  • Space Charge
  • Technical Information Centers
  • Thickness
  • Tunnel Diodes
  • Tunnels

Fields of Study

  • Engineering
  • Physics

Readers

  • Semiconductor Device Technology
  • Theoretical Analysis.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene