Current Instability and Shot Noise in Nanometric Semiconductor Heterostructures
Abstract
We investigate electron transport and shot noise in single barrier GaAs/AlGaAs heterostructure of nanometric sizes. The coupling between space charge and the dependence of the transmission coefficient on energy is found to provide the positive feedback which enhances shot noise and ultimately leads to a current instability of S-type. Theoretical results are in qualitative agreement with existing experiments and confirm recent Monte Carlo simulations evidencing shot-noise enhancement in GaAs/AlGaAs heterostructures.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 23, 2000
- Accession Number
- ADP013135
Entities
People
- A. Reklaitis
- L. Reggiani
- V
Organizations
- Semiconductor Physics Institute