Hopping Transport Equation for Electrons in Superlattices With Vertical Disorder
Abstract
We develop a theory of vertical hopping transport in doped superlattices with intentional vertical disorder introduced by controlled random variations of well widths. For structures with sufficiently large disorder, the vertical conductance (in the direction of the growth axis) is limited by phonon-assisted hopping between the wells. It is shown that due to quasi-equilibrium situation within the wells, the master rate equation for transitions between the electronic states of the structure can be reduced to a truncated rate equation for inter-well transitions only. At low bias, the solution of this rate equation is shown to be equivalent to finding total resistance of a quasi-one-dimensional network of resistance expressed in terms of integral transition rates between the wells. This network is generally different from the Miller-Abrahams network and contains multisite resistors.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 23, 2000
- Accession Number
- ADP013136
Entities
People
- I. P. Zvyagin
- K. E. Borisov
- M. A. Ormont
Organizations
- Moscow State University