Long Wavelength Quantum Dot Lasers on GaAs Substrates

Abstract

We study 1.3 micrometer diode lasers based on self-organized InAs quantum dots grown by MBE on GaAs substrates. Overgrowing the InAs quantum dot array with thin InGaAs layer allows us to achieve 1.3 micrometers emission and keep sufficiently high surface density of quantum dots. Using transmission electron microscopy we show that the main reason for the long wavelength PL shift InAs/InGaAs quantum dots is non-uniform distribution of In in InGaAs leading to the increase in effective volume of a quantum dot. Long stripe lasers showed low threshold current density (<100 A/cm2), high differential efficiency (>5O%). and low internal loss (^l-2cm(-1)). Maximum output power for wide stripe lasers was as high as 2.7 W and for single-mode devices 110 mW. The lasing wavelength for VCSELs was I .28 micrometrs. The threshold current for the device with the 12 micrometer apperture was 1.8 mA. The output power of 220 mW at drive current of 2.4 mA was observed under pulsed mode.

Document Details

• Document Type: Technical Report
• Publication Date: Jun 23, 2000
• Accession Number: ADP013145

Entities

People

• A. E. Zhukov
• A. R. Kovsh
• N. A. Maleev
• S. S. Mikhrin
• V. M. Ustinov

Organizations

• Russian Academy of Sciences

Tags

Communities of Interest

• Energy and Power Technologies

DTIC Thesaurus Topics

• Air Force
• Communication Systems
• Current Density
• Efficiency
• Electron Microscopy
• Energy Bands
• Ground State
• Heterojunctions
• Laser Diodes
• Lasers
• Long Wavelengths
• Optical Communications
• Quantum Dot Lasers
• Quantum Dots
• Quantum Efficiency
• Quantum Wells
• Transmission Electron Microscopy

Fields of Study

• Materials science

Readers

• Optical Physics and Photonics.
• Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
• Semiconductor Device Technology

Technology Areas

• Directed Energy
• Microelectronics
• Quantum Computing