Novel GaAs/GaSb Heterostructures Emitting at 2 mu m Wavelength

Abstract

We report on growth as well as optical transmission electron microscopy and X-ray diffraction studies of a new type of a GaAs/GaSb heterostructure with 1 to 3 monolayer thick GaAs layers embedded within unstrained GaSb. In such structures the GaAs layer is under tensile stress in contrast to the situation in which self-organized growth of quantum dots is commonly observed. The structure emits light in the 2 micrometer wavelength range.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP013149

Entities

People

  • A. A. Toropov
  • B. Ya. Mel'tser
  • R. N. Kyutt
  • V. A. Solov'ev
  • Ya. V. Terent'ev

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Space

DTIC Thesaurus Topics

  • Band Gaps
  • Crystal Lattices
  • Crystal Structure
  • Electron Microscopy
  • Energy Bands
  • Heterojunctions
  • Laser Diodes
  • Lasers
  • Low Temperature
  • Materials
  • Microscopes
  • Quantum Dot Lasers
  • Quantum Dots
  • Semiconductor Lasers
  • Semiconductors
  • Three Dimensional
  • Transmission Electron Microscopy

Fields of Study

  • Materials science

Readers

  • Mechanical Engineering/Mechanics of Materials.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Quantum Computing