Evolution of RHEED Intensity in the Simulated Homoepitaxial Growth of GaAs(OOl)

Abstract

The influence of surface reconstruction on the homoepitaxial growth of GaAs 100 has been studied by the Monte Carlo simulations. In the model both Ga and As species are deposited onto a GaAs 001 - beta2(2x4) reconstructed surface simultaneously at T about 580 C as this corresponds to the ordinary growth condition of molecular beam epitaxy. The growth mechanism of the beta2(2 x 4) structure has been identified; also studied are the step-flow growth modes on vicinal surfaces of various misorientations.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP013150

Entities

People

  • M. Itoh
  • T. Ohno

Organizations

  • Osaka University

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Anisotropy
  • Diffusion
  • Electron Diffraction
  • Hard Copy
  • High Energy
  • Intensity
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Molecules
  • Monte Carlo Method
  • Oscillation
  • Personal Information Managers
  • Random Walk
  • Semiconductor Devices
  • Semiconductors
  • Simulations
  • Technical Information Centers

Fields of Study

  • Materials science

Readers

  • Computational Fluid Dynamics (CFD)
  • Semiconductor Device Technology
  • Thin Film Deposition Science.