Pulsed Ion-Beam Synthesis of beta-FeSi2 Layers on Si Implanted by Fe+ Ions
Abstract
Synthesis of beta-FeSi2 layers on Si was performed by high-dose Fe+ implantation in Si at 300 K with subsequent pulsed ion treatment (PIT) on implanted layers by powerful ion beams (PIB) of nanosecond duration. It was shown that the layer consists of the grains (presipitates) beta--FeSi2 with size approximately 30-40 nm. The results of the optical absorption indicate the formation of direct-band gap structures with an optical gap E(g) about 0.82-0.83 eV. It is shown that the pulsed ion-beam synthesized sample is able to emit at the lambda about 1.56 micrometersd up to temperature of 210 K.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 2001
- Accession Number
- ADP013155
Entities
People
- E. I. Terukov
- I. B. Khaibullin
- R. I. Batalov
- R. M. Bayazitov
- V. Kh. Kudoyarova
Organizations
- Russian Academy of Sciences