Effect of Growth Conditions on Optical Properties of Ge Submonolayer Nanoinclusions in a Si Matrix Grown by Molecular Beam Epitaxy

Abstract

Optical properties of the Ge submonolayer (SML) nanoinclusions in a Si matrix grown by moleeular beam epitaxy (MBE) are investigated. It is shown that at relatively high growth temperatures (> 600 C) there are new features which appear in a PL spectra. These features correspond to formation of the germanium nanoobjeets in a silicon media.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP013157

Entities

People

  • A. F. Tsatsul'nikov
  • B. V. Volovik
  • G. E. Cirlin
  • V. A. Egorov
  • V. M. Ustinov

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Electron Diffraction
  • Electron Microscopy
  • Electrons
  • Energy
  • Energy Bands
  • Epitaxial Growth
  • Excitation
  • High Resolution
  • High Temperature
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Optical Properties
  • Optics
  • Quantum Dots
  • Spectra
  • Transmission Electron Microscopy

Fields of Study

  • Materials science
  • Physics

Readers

  • Neural Network Machine Learning.
  • Semiconductor Device Technology
  • Thin Film Deposition Science.