Surface Segregation in Epitaxy of III-V Compounds

Abstract

Surface segregation in III-V compound heterostrucures grown by Molecular Beam Epitaxy (MBE) and Metal-Organic Vapor Phase Epitaxy (MOVPE) is studied theorencally. The suggested model treats segregation as a transient process resulting in a delayed highly-volatile species incorporation into the crystal accompanied by its accumulation on the growth surface. Specific features of In segregation in InGaAs and InGaN are discussed with respect to control of the composition profile and efficiency of In incorporation into the crystal.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP013160

Entities

People

  • S. Yu. Karpov
  • Yu. N. Marakov

Tags

Communities of Interest

  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Adsorption
  • Band Gaps
  • Crystals
  • Desorption
  • Energy Bands
  • Epitaxial Growth
  • Equations
  • Experimental Data
  • Hard Copy
  • Heterojunctions
  • High Temperature
  • Low Temperature
  • Quantum Wells
  • Semiconductor Devices
  • Semiconductors
  • Technical Information Centers
  • Thickness

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology