Morphology and Photoelectronic Properties of the InAs/GaAs Surface Quantum Dots Grown by Vapor Phase Epitaxy

Abstract

A comparative study of the surface morophology photoluminescence and photoelectric properties of the heterosniwtures with InAs, GaAs quantum dots (QDs) grown on the surface and uncovered by etching away the GaAs cladding layer has been carried out. The red shift of the ground transition energy in the surface QDs compared to the QDs embedded into the GaAs matrix has been shown to be related not only to relaxation of the elastic strain but also to the differences in the size and shape of the nanoclusters.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP013161

Entities

People

  • B. N. Zvonkov
  • D. O. Filatov
  • I. A. Karpovich
  • N. V. Baidus
  • Sergey V. Morozov

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Barometric Pressure
  • Chemical Composition
  • Chemical Etching
  • Education
  • Etching
  • Fermi Levels
  • Hard Copy
  • Measurement
  • Nanostructures
  • Oxides
  • Photosensitivity
  • Quantum Dots
  • Semiconductors
  • Single Crystals
  • Spectra
  • Technical Information Centers
  • Vapor Phases

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing