MBE Growth of High Quality GaAsN Bulk Layers

Abstract

In the present work we have carefully optimized the operation of plasma source and the growth parameters of GaAsN layers. We have demonstrated the possibility of incorporation about 1.5% of N into GaAs without decreasing the photoluminescence intensity.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP013162

Entities

People

  • A. R. Kovsh
  • J. S. Wang
  • J. Y. Chi
  • L. Wei
  • Y. T. Wu

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Annealing
  • Band Structures
  • Flow
  • Flow Rate
  • Intensity
  • Lasers
  • Light Sources
  • Long Wavelengths
  • Low Temperature
  • Measurement
  • Nitrogen
  • Phase Separation
  • Point Defects
  • Power
  • Radio Frequency
  • Radio Frequency Power
  • Solid State Lasers

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology