Indium Distribution in Pseudomorphic InGaAs/(Al)GaAs Quantum Wells Grown by MOCVD

Abstract

Indium atom distribution in InGaAs/(Al)GaAs quantum wells (QWs) grown by metal organic chemical vapor deposition (MOCVD) was systematically studied. High resolution grazing sputter angle Auger electron spectroscopy was used as a method of indium depth profile investigation. Broadening and shift to the surface ofindium concentration profile in single QW the increase of indium content in upper quantum well for close spaced QWs were found. It was observed that the use of AlGaAs barriers between QWs reduces indium surface segregation.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP013164

Entities

People

  • A. A. Marmalyuk
  • A. A. Padalitsa
  • A. V. Petrovsky
  • D. B. Nitikin
  • O. I. Govorkov

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Auger Electron Spectroscopy
  • Auger Electrons
  • Chemical Vapor Deposition
  • Diffraction
  • Electron Microscopy
  • Electron Spectroscopy
  • Electrons
  • Epitaxial Growth
  • Heterojunctions
  • Mass Spectrometry
  • Mass Spectroscopy
  • Materials
  • Quantum Wells
  • Spectra
  • Spectrometry
  • Spectroscopy
  • Transmission Electron Microscopy

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology
  • Spectroscopy.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing
  • Space