Thermodynamic Analysis of MBE Growth of Quarternary InGaAsN Compounds

Abstract

LNGaAsN has recently been proposed as a novel material for near-infrared lasers. The merits of this material are due to the strong bowing in the bandgap of the GaAs-GaN alloy system which offers the extension of the light emission range from GaAs-based structures to 1.3 micrometers and longer. At the same time the band-offsets between InGaAsN and GaAs are larger than in the conventionally used InGaAsP system which should greatly improve high temperature performance of the 1.3 micrometer lasers. The combination with the presently available GaAs/AlAs distributed Bragg reflector (DBR) technology could also lead to novel vertical cavity lasers for the long wavelength region.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP013166

Entities

People

  • A. E. Zhukov
  • A. R. Kovsh
  • A. Yu. Egorov
  • N. A. Maleev
  • V. A. Odnoblyudov

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Coefficients
  • Distributed Bragg Reflectors
  • Elements
  • Experimental Data
  • Hard Copy
  • High Temperature
  • Infrared Lasers
  • Lasers
  • Long Wavelengths
  • Materials
  • Nanostructures
  • Nitrogen
  • Quantum Well Lasers
  • Quantum Wells
  • Solid Phases
  • Substrates
  • Technical Information Centers

Fields of Study

  • Materials science

Readers

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Technology Areas

  • Directed Energy