A Technique for Fabricating InGaAs/GaAs Nanotubes of Precisely Controlled Length

Abstract

Single-crystal nanotubes of precisely controlled length were produced on a (110) cleaved facet of heterostruture. The selective MBE growth of a strained InGaAs/GaAs snip and its subsequent self-rolling were used. The proposed technique is capable of ensuring good reproducibility of all sizes and exact positioning of nanotubes.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP013167

Entities

People

  • A. V. Chehovskiy
  • B. R. Semyagin
  • V. V. Preobrazenski
  • V. Ya. Prinz

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Carbon Nanotubes
  • Crystals
  • Diameters
  • Fullerenes
  • Hard Copy
  • Heterojunctions
  • Nanostructures
  • Nanotechnology
  • Oxides
  • Photographs
  • Photolithography
  • Physics
  • Reproducibility
  • Semiconductor Physics
  • Semiconductors
  • Single Crystals
  • Technical Information Centers

Fields of Study

  • Materials science

Readers

  • Nanocomposite Materials Science
  • Solar Photovoltaics and Thermoelectric Devices.
  • Thin Film Deposition Science.