Anion Incorporation in AlGaAsSb Alloys Grown by MBE

Abstract

An influence of MBE growth parameters (substrate temperature, total group V flux, and As/Sb flux ratio) on a composition of Al(x)Ga(1-x)As(y)Sb(i-y) alloys (x = 0.5) as well as their structural quality have been studied in detail. Using these data, As and Sb incorporation coefficients have been calculated in two different ways. An effect of the unintentional Sb incorporation in InAs layers is also discussed.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP013168

Entities

People

  • A. N. Semenov
  • B. Ya. Mel'tser
  • S V Ivanov
  • V. A. Solov'ev
  • V. S. Sorokin

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Coefficients
  • Diffraction
  • Electron Probes
  • Elements
  • Experimental Data
  • Fluoride Glass
  • Glass Fibers
  • Hard Copy
  • High Resolution
  • Ionization Gages
  • Measurement
  • Molecular Beams
  • Molecular Spectroscopy
  • Phase Separation
  • Substrates
  • Technical Information Centers
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology