Nitrogen-Activated Phase Separation in InGaAsN/GaAs Heterostructures Grown by MBE

Abstract

InGaAsN insertions in a GaAs matrix grown by molecular beam epitaxy (MBE) demonstrate a pronounced effect of phase separation even at relatively low indium and nitrogen concentrations. Cross-section high-resolution transmission electron microscopy (TEM) images processed using a specially developed software demonstrated an effect of nitrogen decomnon of InAs-rich regions in the structures studied. Formation of ordered structures of compositional domains has been revealed in plan-view TEM images.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP013169

Entities

People

  • A. Kovsh
  • B. V. Volovik
  • I. P. Soshnikov
  • N. A. Maleev
  • N. N. Ledentsov

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Electron Microscopy
  • Fourier Transformation
  • Hard Copy
  • Heterojunctions
  • High Resolution
  • Image Processing
  • Ion Beams
  • Long Wavelengths
  • Microscopy
  • Modulation
  • Nitrogen
  • Phase
  • Phase Separation
  • Quantum Dots
  • Quantum Wells
  • Technical Information Centers
  • Transmission Electron Microscopy

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics