Thin Epitaxial Al and Cu Films Grown on CaF2/Si(111)
Abstract
Molecular beam epitaxy was used to grow single crystal CaF2 Al and Cu films on Si(111). Reflection high energy electron diffraction indicated that Al film was epitaxial when it was grown on CaF2/Si, and that epitaxial Cu film can be grown on Al/CaF2/Si heteroepitaxial substrates. Room tenmperature measurements of resistivity of Al films 10 to 300 nm thick agree with the Fuchs-Sondheimer model in which only diffuse scattering of conduction electrons occurs at the film interfaces. For 50 to 1000 nm thick Cu films the resistivity size effect is greater than the prediction of this model.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 2001
- Accession Number
- ADP013171
Entities
People
- L. J. Schowalter
- N. L. Yakovlev
- Y. V. Shusterman
Organizations
- Russian Academy of Sciences