Impurity Potential Fluctuations for Selectively Doped p-Ge/Ge1 xSix Heterostructures in the Quantum Hall Regime

Abstract

Two models for random impurity potential (the model with randomly distributed charged centers located within a layer and the model of the system with spacer) are used for the estimation of the impurity potential flucatiation parameter's values: random potential amplitude the nonlinear screening length in vicinity of integer filling factors nu = I and nu = 2 the background density of state (DOS). The described models are suitable for the explanation of unusual high value of DOS at nu = 1 and nu = 2 in conuast to short-range impurity potential models.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP013173

Entities

People

  • G. I. Harus
  • N. G. Shelushinina
  • O. A. Kuznetsov
  • V. N. Neverov
  • Yu. G. Arapov

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Amplitude
  • Band Structures
  • Blood Coagulation Factors
  • Dielectric Permittivity
  • Electron Density
  • Electron Energy
  • Electrons
  • Energy
  • Energy Bands
  • Fermi Levels
  • Heterojunctions
  • Impurities
  • Magnetic Fields
  • Mobility
  • Technical Information Centers
  • Two Dimensional
  • Valence Bands

Fields of Study

  • Physics

Readers

  • Analytical Mechanics
  • Computational Modeling and Simulation
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Quantum Computing