Time Constant of Far IR Response of Quantum Hall Device

Abstract

The characteristic time of far IR response of quantum Hall effect detector in GaA/AlGaAs has been investigated versus the magnetic field. The response time is shown to increase dramatically with the field due to the spatial separation of photoexcited electrons and holes captured by localized states formed by the disordered potential.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP013177

Entities

People

  • I. V. Erofeeva
  • O. Astafiev
  • S. Komiyama
  • V. I. Gavrilenko
  • Y. Kawano

Organizations

  • Russian Academy of Sciences

Tags

DTIC Thesaurus Topics

  • Band Gaps
  • Blood Coagulation Factors
  • Cyclotron Resonance
  • Detectors
  • Electron Gas
  • Electrons
  • Energy Bands
  • Far Infrared Radiation
  • Fermi Levels
  • Fiber Optics
  • Hall Effect
  • Infrared Phenomena
  • Magnetic Fields
  • Nanostructures
  • Physics
  • Radiation
  • Technical Information Centers

Fields of Study

  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing