Configuration Interaction Applied to Resonant States in Semiconductors and Semiconductor Nanostructures

Abstract

A new approach for calculation of resonant state parameters is developed. The method proposed allows to solve different scattering prohlems such as scattering and capture probability as wvell as calculations of shifts and widths of energy levels. It has been applied to the problem of resonant states induced by inmpurities in the barrier of quantum wells and by strain in uniaxially stressed germanium.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP013179

Entities

People

  • A. A. Prokofiev
  • A. Blom
  • I. N. Yassievich
  • K. A. Chao
  • M. A. Odnoblyudov

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Continuous Spectra
  • Distribution Functions
  • Elastic Scattering
  • Electric Fields
  • Energy
  • Energy Levels
  • Equations
  • Ground State
  • Impurities
  • Infrared Phenomena
  • Nanostructures
  • Probability
  • Quantum Wells
  • Scattering
  • Semiconductors
  • Spectra
  • Wave Functions

Fields of Study

  • Physics

Readers

  • Calculus or Mathematical Analysis
  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Quantum Computing