Excitons in Nitride-Based Low Dimensional Systems

Abstract

The exciton binding energy is large (25-27 meV) in bulk GaN. The coupling with the electromagnetic is large too. Together with a collegue I predicted a Rabbi oscillation splitting of some 45 meV in GaN based microcavities.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP013181

Entities

People

  • Bernard Gil

Organizations

  • Montpellier 2 University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Aluminum
  • Band Gaps
  • Electric Fields
  • Energy
  • Excitons
  • Hard Copy
  • High Temperature
  • Low Temperature
  • Materials
  • Nanostructures
  • Optical Properties
  • Photoluminescence
  • Quantum Wells
  • Semiconductors
  • Spectra
  • Stark Effect
  • Technical Information Centers

Fields of Study

  • Physics

Readers

  • Military Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics