Correlation of Mosaic Structure Peculiarities with Electric Characteristics and Surface Multifractal Parameters for GaN Epitaxial Layers

Abstract

The first successful results of multifractal analysis application to a quantitative description of mosaic structure peculiarities which are typical of GaN epitaxial layer with hexagonal modification grown on (0001) sapphire substrates have been obtained. Characteristic size of the mosaic structure has been measured to be 200-800 nm. The direct dependence of mobility on the multifractal parameters (the Renyi dimension and the degree of the order index) of the surface topology of the mosaic structure has been observed for all GaN layers investigated.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP013184

Entities

People

  • A. D. Kryzhanovsky
  • A. G. Kolmakov
  • N. M. Shmidt
  • V. V. Emtsev
  • W. V. Lundin

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Carrier Mobility
  • Chemical Vapor Deposition
  • Computer Programs
  • Conductivity
  • Diffraction Analysis
  • Dislocations
  • Electrical Properties
  • Electron Mobility
  • High Density
  • Materials
  • Mobility
  • Physical Properties
  • Technical Information Centers
  • Vapor Deposition
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Statistical inference.