Dissimilarity Between Cleaved Edge and Surface Regions of GaN (0001) Epitaxial Layers Studied by Spatially-Resolved Photoluminescence and Reflectivity

Abstract

Polarized photoluminescence and reflectance spectroscopy with high spatial resolution are employed to show the different optical properties of cleaved edges with respect to internal regions of thick GaN epitaxial layers. The values of spin-orbft and crystal-field parameters are determined separately for these areas. The obtained data indicate that an absorption edge of the material within the cleaved edge regions is below the energy of emission from internal regions which can be disadvantageous for the operation of edge-emitting devices such as LED and lasers.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP013186

Entities

People

  • A. A. Toropov
  • A. I. Karlik
  • M. G. Tkachman
  • S V Ivanov
  • T. V. Shubina

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Crystals
  • Electron Microscopy
  • Energy Bands
  • Energy Gaps
  • Excitons
  • Lasers
  • Long Wavelengths
  • Measurement
  • Optical Properties
  • Optics
  • Physics
  • Polarization
  • Reflectance
  • Spectra
  • Spin-Orbit Interaction
  • Transmission Electron Microscopy

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Spectroscopy.

Technology Areas

  • Directed Energy
  • Directed Energy - Lasers