Modeling of Band Offsets in GaN Based Heterostructures

Abstract

We present a tight binding modeling of the band offsets of GaN based heterostructures. The model considers the nonorthogonality of the sp(3) set of orbitals of adjacent atoms and spin-orbit coupling and uses the Hartre-Fock atomic energies and interacting matrix element obtained by fitting existing band structures for bulk materials to determine the valence band energies at 0 K and I Bar, which are screened by the optical dielectric constants of bulk materials at any temperature, pressure, strain, and composition. The model compares very well with experiment for the valence and conduction band offsets of GaN based and many other heterostructures.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP013187

Entities

People

  • H. Uenlue

Organizations

  • Istanbul Technical University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Bipolar Junction Transistors
  • Bulk Semiconductors
  • Conduction Bands
  • Dielectric Permittivity
  • Energy Bands
  • Equations
  • Field Effect Transistors
  • Heat Capacity
  • Heterojunction Bipolar Transistors
  • Heterojunctions
  • Semiconductors
  • Technical Information Centers
  • Valence
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.
  • Regression Analysis.

Technology Areas

  • Space