Development of 1300 nm GaAs-Based Microcavity Light-Emitting Diodes

Abstract

The present status of basic development steps towards AlGaAs/ GaAs microcavity devices emitting at 1.3 micrometers is presented. An emission wavelength of the active medium of 1.3 micrometer was achieved by the implementation of self-organized InAs/ GaInAs quantum dots. To match the wavelength tight control of the microcavity parameters was ensured by an improved layer thickness calibration procedure. Incorporation of a reverse-biased Si/ Be-doped GaAs tunnel junction with record low junction resistance is expected to improve the lateral carrier distribution for intra-cavity contacted devices.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP013190

Entities

People

  • C. Moeller
  • H. Kuenzel
  • J. Boettcher
  • N. A. Maleev
  • W. Passenberg

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Calibration
  • Current Density
  • Diodes
  • Distributed Bragg Reflectors
  • Electron Mobility
  • Electrons
  • Epitaxial Growth
  • Heat Treatment
  • Lasers
  • Light Emitting Diodes
  • Light Sources
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Optomechanics
  • Quantum Dots
  • Reflection
  • Thickness

Fields of Study

  • Materials science

Readers

  • Optical Physics and Photonics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Quantum Computing