1.5 MU M Fabry-Perot Microcavities Based on Hydrogenated Silicon and Related Materials
Abstract
Fabry-Perot a-Si:H/a- Si:O:H microcavities with Er-doped a-Si:H active region were fabricated by plasma-enhanced chemical vapor deposition technique. A metalorganic compound was used to incorporate erbium into the active a-Si:H layer. The room temperature transmission, reflection and spontaneous emission spectra of the microcavities with 2 and 3 pairs of layers in distributed Bragg reflectors are measured. An intensity enhancement by two order of magnitude and selective narrowing of the 1.54 micrometer erbium emission line was observed as compared to the case of a single a-Si(Er):H film deposed on a quartz substrate. A theoretical analysis of the experimental data presented is given.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 2001
- Accession Number
- ADP013191
Entities
People
- A. A. Dukin
- A. A. Feoktistov
- A. B. Pevtsov
- A. V. Medvedev
- V. G. Golubev
Organizations
- Russian Academy of Sciences