Electrostatic Force Microscopy, Principles and Applications to Semiconductor Materials and Devices

Abstract

We have shown the principles on which is based the Electrostatic Force Microscopy and the expected peffomances. Basing on experimental data we have seen how to interpret the contrasts observed in the experiments. Then we have shown typical observations on semiconductors. We can say that the EFM is now an established method to explore local properties of semiconductor materials structures and devices but the field can be widened by new developments.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP013199

Entities

People

  • Paul Girard

Organizations

  • Montpellier 2 University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Couplings
  • Detectors
  • Electrical Properties
  • Experimental Data
  • Frequency
  • Hard Copy
  • High Vacuum
  • Low Temperature
  • Materials
  • Measurement
  • Microscopy
  • Nanostructures
  • Observation
  • Semiconductors
  • Technical Information Centers

Fields of Study

  • Materials science

Readers

  • Nanoscale Plasmonic Nanotechnology
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Systems Analysis and Design

Technology Areas

  • Microelectronics