Electrostatic Force Microscopy Study of the Electric Field Distribution in Semiconductor Laser Diodes Under Applied Biases
Abstract
In conclusion we present a new and direct electrostatic force microscopy method to resolve the electric field and capacitance distributions in laser diodes. Using this method we have investigated the fine structure of the electric field in AlGaAs/GaAs and InGaP/GaAs p-i-n based laser diodes under forward and backward biases. We have also found a strong increase in the capacftance at the waveguide under forward biases. We believe that this effect is related to the carriers injection into the waveguide and can be used to study the injected carriers distribution.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 2001
- Accession Number
- ADP013200
Entities
People
- A. Ankudinov
- A. Titkov
- D. Livshiz
- E. Kotelnikov
- V. Evtikhiev
Organizations
- Russian Academy of Sciences