Magneto-Tunnelling Spectroscopy of Localised and Extended States in a Quantum Well Containing Quantum Dots
Abstract
We investigate resonant tunneling in GaAs/(AlGa)As double-barrier resonant-tunneling diodes (RTDs) in which a single layer of InAs self-assembled quantum dots (SAQDs) is embedded in the center of the GaAs quantum well. The dots provide a well-defined and controllable source of disorder in the well and we use resonant tunneling for studying the effect of disorder on the electronic properties of the well.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 2001
- Accession Number
- ADP013202
Entities
People
- A. Patane
- E. E. Vdovin
- I. A. Larkin
- P. N. Brounkov
- Yu. V. Dubrovskii
Organizations
- Russian Academy of Sciences