A Study of Semiconductor Quantum Structures by Microwave Modulated Photolumenescence
Abstract
Mixed types I type II multiple quantum wells structures consist of alternating narrow and wide GaAs wells (WW and NW) separated by AlAs barriers. Transfer of electrons from the narrow to the wide well results in the formation of two-dimensional electron and hole gases (2DEG and 2DHG) at the WW and NW respectively. The present study investigated the influence of the 2DEG and the 2DHG on the optical properties of the materials. The study utilized two modulations techniques: double beam photoluminescence and microwave modulated PL offering high-resolution spectroscopy control of the density of the gases and their kinetic energy. The results showed that the existence of the low density 2DEG in the wide well cause the formation of trions or plasma-like recombination. In addition electrons transfer through the barrier leads to a barrier-NW indirect recombination emission. The latter is influenced by an electrostatic potential induced by the two-dimensional gases.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 2001
- Accession Number
- ADP013204
Entities
People
- A. Ron
- E. Cohen
- E. Lifshitz
- H. Shtrikman
- R. Gulyamov
Organizations
- Technion – Israel Institute of Technology