Stoichiometry and Atomic Concentration Depth Profiles in InAs/Si Quantum Dot Systems by Rutherford Backscattering Spectroscopy and Secondary Ion Mass Spectroscopy

Abstract

Stoichiometry and atomic concentration distributions for MBE grown systems of InAs quantum dots buried in a Si matrix has been studied using Rutherford Backscattering spectroscopy and Secondary Ion Mass Spectroscopy depth profiling. We have found a significant excess of As atoms which under elevated temperatures diffuse into the Si matrix despite of a larger ionic radius. This may affect the band alignment on the QD, matrix interface. Our findings suggest improvements office MBE growth process for InAs/Si and similar systems.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP013205

Entities

People

  • Alexander T. Wenzel
  • B. Stritzker
  • H. Karl
  • R. Claessen
  • V. N. Strocov

Organizations

  • University of Augsburg

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Backscattering
  • Band Gaps
  • Diffraction
  • Electron Diffraction
  • Electron Microscopy
  • Energy
  • Energy Bands
  • High Resolution
  • Mass Spectroscopy
  • Materials
  • Measurement
  • Nanocrystals
  • Optics
  • Quantum Dots
  • Spectra
  • Spectroscopy
  • Transmission Electron Microscopy

Fields of Study

  • Materials science

Readers

  • Acoustical Oceanography.
  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Quantum Computing