Computational and Experimental Studies on Strain Induced Effects in InGaAs/GaAs HFET Structure Using C-V Profiling

Abstract

We analyze strain induced effects on the capacitance-voltage (C-V) profile for MBE grown GaAs/In(0.1)Ga(0.9)As/GaAs HFET structure. The calculations of C-V profile were made using a small-signal approach developed for the quantum well (QW) structures. The self-consistent numerical simulations and results of measurements show that strain causes significant changes in the electron distribution of the QW structure and its C-V profile.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP013208

Entities

People

  • A. E. Zhukov
  • D. V. Pakhnin
  • M. F. Kokorev
  • N. A. Maleev
  • V. M. Ustinov

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Capacitance
  • Charge Density
  • Conduction Bands
  • Electron Beam Lithography
  • Electronics
  • Electrons
  • Energy
  • Energy Bands
  • Epitaxial Growth
  • Equations
  • Experimental Data
  • Molecular Beam Epitaxy
  • Optoelectronic Devices
  • Quantum Wells
  • Semiconductors
  • Simulations
  • Technical Information Centers

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Quantum Computing