Polarized Electron Photoemission Studies of Spin Relaxation in Thin GaAs Epitaxial Films
Abstract
The results of systematic study of polarized electron emission from unstrained GaAs thin epitaxial layers with varying thickness are presented. Excitation spectra of the polarized photoemission reflect the optical spin orientation of the electrons produced by the circularly polarized light excitation and spin relaxation kinetics. The interpretation of the spectra and their temperature dependencies shows the importance of valence band wrapping and correlation between the spin and the momentum of an electron. For thin overlayers the residual polarization losses occur in the band-bending region.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 2001
- Accession Number
- ADP013209
Entities
People
- Alexander V. Rochansky
- Anton N. Ambrajei
- Arsen V. Subashiev
- Yuri A. Mamaev
- Yuri P. Yashin
Organizations
- Peter the Great Saint Petersburg State Polytechnical University