Vibration Study of Nitrogen Incorporation in InGaAsN Alloys

Abstract

We present an infrared (IR) reflectivity and Raman study of In(x) Ga(1-x)As(1-y)N(y) (x =0 and ^0.08, y ^0.03) alloys grown by molecular beam epitaxy. We observed: strong diagonal Raman components of GaAs-type phonons indicating a local trigonal distortion of the alloy lattice induced by nitrogen ordering; indium induced splitting of the Ga-N type vibration indicating a formation of different local nitrogen atomic arrangements; a sharp (halfwidth^1 cm(-1)) IR mode at 360 cm(-1), of unknown origin.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP013210

Entities

People

  • A. M. Mintairov
  • A. S. Vlasov
  • J. L. Merz
  • P. A. Blagnov
  • V. M. Ustinov

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Crystal Lattice Vibrations
  • Crystal Lattices
  • Diffraction
  • Distortion
  • Electrical Engineering
  • Frequency
  • Measurement
  • Nanostructures
  • Nitrogen
  • Phase Separation
  • Phonons
  • Raman Spectra
  • Scattering
  • Spectra
  • Spectroscopy
  • Technical Information Centers
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

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