HRXRD and TEM Studies of Cluster Formation in LT GaAs

Abstract

This paper employs high resolution x-ray diffractometry (HRXRD) and transmission electron microscopy (TEM) to study structural transformations in LT GaAs matrices doped with isovalent Sb impurity.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP013211

Entities

People

  • A. A. Suvorova
  • D. A. Yasukov
  • M. A. Putyato
  • V. V. Chaldyshev
  • V. V. Preobrazhenskii

Organizations

  • Russian Academy of Sciences

Tags

DTIC Thesaurus Topics

  • Annealing
  • Electron Microscopy
  • Hard Copy
  • High Resolution
  • High Temperature
  • Impurities
  • Low Temperature
  • Materials
  • Measurement
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Optical Absorption
  • Physics
  • Semiconductor Physics
  • Semiconductors
  • Technical Information Centers
  • X Rays

Readers

  • Powder metallurgy of Titanium alloys.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics