Direct Observation of Two-Level Electronic Emission from QDs InAs/GaAs by Means of C-V and Admittance Spectroscopy

Abstract

The emission of electrons from ground and first excited energy levels of InAs self- organized quantum dots grown by MOCVD has been registered by means of steady-state capacitance vs. voltage technique and admittance spectroscopy. We found a fine structure of carrier concentration profile in the area of QDs. The dependence of activation energy of the levels in the QDs on applied bias also has been obtained.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP013212

Entities

People

  • A. V. Solomonov
  • V. I. Zubkov

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Electric Fields
  • Electron Energy
  • Electrons
  • Emission
  • Energy
  • Energy Bands
  • Energy Levels
  • Frequency
  • Heat Of Activation
  • Low Temperature
  • Quantum Dots
  • Quantum Wells
  • Spectra
  • Spectroscopy
  • Technical Information Centers
  • Thermionic Emission

Fields of Study

  • Materials science

Readers

  • Electromagnetic Wave Scattering and Antenna Radiation Engineering
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Quantum Computing