Resonant gamma-X-Transfer in GaAs/AlAs Quantum-Well Structures

Abstract

We investigate the Gamma(2-)X(z1) intersubband dynamics in GaAs/AlAs quantum-well structures by time-resolved infrared pump and probe experiments. In the studied structure, the second Gamma-level in GaAs is nearly resonant to the first X(z-)-level in AlAs. We observe a biexponential decay of the bleaching signal with a fast time constant in the order of 1 ps and a second slower time constant of about 7 ps at 10 K and 4 ps at 300 K, respectively. The long term decay represents the X(z-)-Gamma(2) transfer by elastic Gamma-X scattering at low temperatures. At 300 K electron-LO-phonon-scattering accelerates the Gamma-X transfer.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP013215

Entities

People

  • A. E. Zhukov
  • A. Seilmeier
  • E. A. Zibik
  • L. E. Vorobjev
  • S. R. Schmidt

Organizations

  • University of Bayreuth

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Absorption
  • Absorption Coefficients
  • Absorption Spectra
  • Band Structures
  • Conduction Bands
  • Crystal Lattice Vibrations
  • Dye Lasers
  • Dynamics
  • Electron Scattering
  • Energy Bands
  • Frequency
  • Lasers
  • Low Temperature
  • Quantum Wells
  • Relaxation Time
  • Repetition Rate
  • Scattering

Fields of Study

  • Materials science

Readers

  • Plasma Physics / Magnetohydrodynamics
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Quantum Computing