Linearly-Polarized Photoluminescence from Type II ZnSe/BeTe Quantum Wells with Atomically-Flat Interfaces

Abstract

This paper reports on improvements in the MBE growth of ZnSe/BeTe QW heterostructures with ZnTe-like interfaces resulting in observation of two narrow oppositely polarized PL peaks. The peaks are attributed to recombination of holes localized by mono-layer fluctuations of the% BeTe QW thickness with electrons from either left or right ZnSe layer. This interpretation is in qualitative agreement with the estimation of the carries conflnement energies performed within the effective mass approximation for a monomolecular QW thickness fluctuation as well as with the symmerty analysis of the QW interlace bonds. On the other hand accurate quantitative description of the energy splitting between the peaks and their degree of linear polarization require additional studies.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP013216

Entities

People

  • A. A. Toropov
  • M. Ichida
  • N. Hori
  • S V Ivanov
  • S. V. Sorokin

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Air Platforms
  • Energy and Power Technologies
  • Space

DTIC Thesaurus Topics

  • Chemical Bonds
  • Electrons
  • Emission
  • Energy
  • Energy Bands
  • Linear Polarization
  • Molecular Beams
  • Optical Properties
  • Photoluminescence
  • Polarization
  • Quantum Wells
  • Scattering
  • Spectra
  • Technical Information Centers
  • Thickness
  • Transitions
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Radar Systems Engineering.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing
  • Quantum Science - Quantum Dots