Spin-Orbit Interaction in AlGaAs/GaAs P-Type Quantum Wells - A Possible Explanation of the "Metal-Insulator" Transition Observed in Two-Dimensional Hole Systems

Abstract

We have performed a calculation of the temperature dependence of the weak-localization correction to resistance in a AlGaAs/GaAs p-type quantum well. In such systems where the spin orbit coupling by far dominates the energy dispersion, we find that the spin relaxation time becomes comparable with the estimated value of the phase coherence time at sufficiently low temperatures and low hole densities. We wish to suggest this crossover between these different relaxation times as a possible explanation of the experimentally observed 'metal-insulator' transition in two- dimensional hole systems.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP013222

Entities

People

  • L. S. Golub
  • S. Pedersen

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Conductivity
  • Dielectrics
  • Hard Copy
  • High Temperature
  • Low Density
  • Magnetic Fields
  • Metal-Insulator Transitions
  • Microelectronics
  • Nanostructures
  • Quantum Properties
  • Quantum Wells
  • Relaxation Time
  • Spin-Orbit Interaction
  • Technical Information Centers
  • Transitions
  • Two Dimensional

Fields of Study

  • Materials science
  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing
  • Space