Optical and Transport Properties of Short Period InAs/GaAs Superlattices

Abstract

The photoluminescence magnetoresistance Shubnikov-de Haas and Hall effect have been investigated in modulation doped short period InAs/GaAs superlattices as a function of InAs layer thickness Q in the range 0.33 < Q < 2.7 monolayer (ML). Large photoluminescence enhancement takes place when InAs layer thickness Q 0.33 ML. When Q > 2,7 ML the quantum dots are formed. The anisotropy of resistivity and mobility of electrons depends not monotonically on the thickness Q of InAs layers.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP013225

Entities

People

  • A. V. Golikov
  • R. A. Lunin
  • V. A. Kulbachinskii
  • V. A. Rogozin
  • V. G. Mokerov

Organizations

  • Moscow State University

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Crystal Lattices
  • Electrical Properties
  • Electron Mobility
  • Electrons
  • Hall Effect
  • Low Temperature
  • Magnetic Fields
  • Magnetoresistance
  • Mobility
  • Monomolecular Films
  • Optical Properties
  • Phase Transformations
  • Quantum Dots
  • Resistance
  • Solid Solutions
  • Superlattices
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Quantum Computing