Electron Dispersion in a Three-Dimensional Regimented Quantum Dot Superlattice

Abstract

The electron band structure in a three-dimensional regimented quantum dot superlattice is analyzed using an envelope function approximation. It is shown that the electron density of states effective mass and carrier mobility in these structures are drastically different from those in quantum well superlattices and bulk materials. By changing the size of quantum dots, inter-dot distances barrier height and regimentation one can effectively tune the electronic properties of the quantum dot superlattices and make them suitable for a variety of device applications.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP013226

Entities

People

  • Alexander A. Balandin
  • Olga L. Lazarenkova

Organizations

  • University of California, Riverside

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Structures
  • Brillouin Zones
  • Bulk Materials
  • Carrier Mobility
  • Crystal Structure
  • Crystals
  • Electrons
  • Energy Bands
  • Materials
  • Perturbation Theory
  • Quantum Dots
  • Quantum Numbers
  • Quantum Wells
  • Simulations
  • Superlattices
  • Three Dimensional
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Approximation Theory.
  • Educational Psychology
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Quantum Computing
  • Quantum Science - Quantum Dots