Investigation of Hot Electron Distribution by Interband Transmittance in N-Type InGaAs/GaAs MQW Heterostructures

Abstract

High lateral electric field effects on transmittance in selectively doped n-type MQW InGaAs/GaAs heterostructures with declination-doped barriers have been studied. The peculiarities of the transmittance modulation spectra associated with electron heating have been observed. The effective temperature of hot electrons in the quantum wells was obtained.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP013227

Entities

People

  • D. G. Revin
  • D. M. Gaponova
  • V. I. Gavrilenko
  • V. Ya. Aleshkin
  • Z. F. Krasil'nik

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Barometric Pressure
  • Bulk Semiconductors
  • Crystal Lattice Vibrations
  • Data Acquisition
  • Distribution Functions
  • Electric Fields
  • Electrons
  • Energy
  • Energy Bands
  • Fermi Levels
  • Heterojunctions
  • Modulation
  • Quantum Wells
  • Semiconductors
  • Spectra
  • Technical Information Centers
  • Transitions

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Spectroscopy.

Technology Areas

  • Microelectronics
  • Quantum Computing