Properties of InP Self-Assembled Quantum Dots Embedded in In0.49(Al(x)Ga(1-x))0.51P Grown by Metalorganic Chemical Vapor Deposition

Abstract

III-Phosphide self-assembled quantum dot (SAQD or simply QD) structures offer the potential to realize injection lasers operating in the visible spectral region with improved performance characteristics such as low threshold current density high charactenstic temperature and high differential gain. Also SAQD growth can overcome the limitation of lattice matching between the substrate and the epitaxial active region due to the inflinsic nature of the growth mode (i.e. strain-induced S-K growth).

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP013230

Entities

People

  • C. V. Reddy
  • D. T. Mathes
  • J. H. Ryou
  • Russell D. Dupuis
  • V. Narayanamurti

Organizations

  • University of Texas at Austin

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Structures
  • Bulk Materials
  • Chemical Vapor Deposition
  • Compound Semiconductors
  • Current Density
  • Electron Emission
  • Electron Microscopy
  • Emission
  • Materials
  • Materials Engineering
  • Materials Science
  • Microscopy
  • Optical Properties
  • Quantum Dots
  • Semiconductors
  • Transmission Electron Microscopy
  • Vapor Deposition

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Quantum Computing