Random Telegraph Noise in InGaAs Self-Assembled Quantum Dots

Abstract

We have measured random telegraph noise in the photoluminescence of individual quantum dots of InGaAs in GaAs. We have observed not only two-level dots but also dots switching among three level in both systems. The experiments show that the switching InGaAs dots behave very similarly to switching InP dots in GaInP. The switching is attributed to defects and we show that the switching can be used as a monitor of the defect.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP013231

Entities

People

  • L. Samuelson
  • M. E. Pistol
  • N. Panev
  • V. Zwiller
  • Wanjun Jiang

Organizations

  • Lund University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Emission
  • Excitation
  • Frequency
  • Hard Copy
  • Images
  • Intensity
  • Materials
  • Materials Science
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Physics
  • Quantum Dots
  • Semiconductors
  • Solid State Physics
  • Switching
  • Technical Information Centers
  • Visual Inspection

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Quantum Computing
  • Quantum Science - Quantum Dots