Double Injection Currents in p-i-n Diodes Incorporating Self-Assembled Quantum Dots

Abstract

We study p-i-n diodes incorporating InAs/ AlAs self-assembled quantum dots (QDs) to probe the electron and hole levels of the dots. Comparative analysis of capacitance-voltage (C-V), current-voltage (I-V) and electroluminescence (EL) measurements shows that p-i-n structures could be successfully used as a quantum dots spectrometer.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP013233

Entities

People

  • A. E. Belyaev
  • A. Patane
  • L. Eaves
  • M. Henini
  • P. C. Main

Organizations

  • University of Nottingham

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Capacitance
  • Diodes
  • Electron Holes
  • Electrons
  • Emission
  • Energy
  • Energy Bands
  • Energy Gaps
  • Excitons
  • Frequency
  • Ground State
  • Magnetic Fields
  • Measurement
  • Quantum Dots
  • Semiconductors
  • Voltage

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Quantum Computing